Tempress Furnaces

    

Tube 2 - OxidationTube 3 - AnnealTube 4 - LP-CVD

Main purpose

Oxidation of silicon (SiO2), thin films

Anneal, alloy  in forming gas

CVD of low stress SiN and stoichiometric Si3N4

thickness 10-500 nm

 

Main Characteristics

Deposition temperature max 1150 °C, Oxide thickness up to 2µm

Anneal up to 900 °C, alloy up to 400 °C

Stress 100 MPa

Facilities

Available: H2O, O2 - Tube cleaning with trans-LC

Available: AR, H2, N2 - Tube cleaning with trans-LC

NH3, DCS, N2 , Ar

Specimen

Max. 100mm wafers, small pieces allowed.

Special condition

Operated by KN staff only

Equipment owner

 

 

+31 6

 

Charles de Boer (back-up)

C.R.deBoer@remove-this.tudelft.nl

+31 652169001