Oxford PECVD
Apparatus |
| Plasmalab 80 Plus |
Supplier | Oxford Instruments Plasma Technology; www.oxinst.com | |
Location | P00.350 | |
Main purpose | PE-CVD | |
System layout | open load, parallel plate system Plasma Enhanced Chemical Vapour Deposition
| |
Gasses | SiH4, N2, Ar, NH3, N2O, CH4, CF4 | |
Power supply | 300W RF source and 500W LF source | |
Process information | deposition of SiO2, Si3N4 and SiC at 300°C and a-Si at 250°C | |
Facilities | max. 400°C aluminum substrate electrode, 240mm diameter frequency mixing possible to minimize film stress endpoint detection for CF4/N2O cleaning
| |
Specimen | max. 8 inch wafer, small pieces allowed | |
Equipment owner | Marinus Fischer +31 628906207
Charles de Boer (back-up) +31 652169001 |