Oxford PECVD

Apparatus

    

Plasmalab 80 Plus

Supplier

 

Oxford Instruments Plasma Technology; www.oxinst.com

Location

 

P00.350

Main purpose

 

PE-CVD

System layout

 

open load, parallel plate system

Plasma Enhanced Chemical Vapour Deposition

 

Gasses

 

SiH4, N2, Ar, NH3, N2O, CH4, CF4

Power supply

 

300W RF source and 500W LF source

Process information

 

deposition of SiO2, Si3N4 and SiC at 300°C and a-Si at 250°C

Facilities

 

max. 400°C aluminum substrate electrode, 240mm diameter

frequency mixing possible to minimize film stress

endpoint detection for CF4/N2O cleaning

 

Specimen

 

max. 8 inch wafer, small pieces allowed

Equipment owner

 

Marinus Fischer

m.fischer@tudelft.nl

+31 628906207

 

Charles de Boer (back-up)

C.R.deBoer@tudelft.nl

+31 652169001