Tempress Furnaces
| Tube 2 - Oxidation | Tube 3 - Anneal | Tube 4 - LP-CVD |
Main purpose | Oxidation of silicon (SiO2), thin films | Anneal, alloy in forming gas | CVD of low stress SiN and stoichiometric Si3N4 thickness 10-500 nm
|
Main Characteristics | Deposition temperature max 1150 °C, Oxide thickness up to 2µm | Anneal up to 900 °C, alloy up to 400 °C | Stress 100 MPa |
Facilities | Available: H2O, O2 - Tube cleaning with trans-LC | Available: AR, H2, N2 - Tube cleaning with trans-LC | NH3, DCS, N2 , Ar |
Specimen | Max. 100mm wafers, small pieces allowed. |
Special condition | Operated by KN staff only |
Equipment owner |
+31 6
Charles de Boer (back-up) +31 652169001 |