PlasmaPro 100
Apparatus |
| PlasmaPro 100 |
Supplier | Oxford Instruments Plasma Technology; www.oxinst.com | |
Location | P00.350 | |
Main purpose | ICP-CVD or HD-CVD Loadlock, ICP and parallel plate system | |
System layout | Inductively coupled Plasma Chemical Vapour Deposition | |
Gasses | SiH4, N2, Ar, NH3, N2O, CH4, CF4,H2,O2 | |
Power supply | 2000W ICP source and 600W RF source | |
Process information | deposition of ICPCVD of a-Si, SiO2 , SiN , SiC, SiOF , a-SiCON:H | |
Facilities | max. 400°C aluminum substrate electrode, 200mm diameter endpoint detection for CF4/O2 cleaning | |
Specimen | max. 8 inch wafer, small pieces allowed, carrier wafer used for small pieces | |
Equipment owner | Marinus Fischer +31 628906207
Charles de Boer (back-up) +31 652169001 |