Sentech F2
Apparatus | Sentech Etchlab 200 |
Supplier | Sentech Instruments |
Location | P.00.390 |
Function | RIE plasma etching of dielectric layers and some metals |
Gasses | CF4, CHF3, O2, He, Ar |
Sources | RF generator 13.56 MHz 600W air cooled |
Cooling systems | not actively; fan cooling |
System layout | Direct load i.e. insert sample via top-lid |
Chuck | 200 mm Electrode is covered with a 200mm quartz plate |
Process information | Si3N4 , SiO2, anisotropic photoresist etch, descumm |
Facilities | Sentech laser interferometer SLI670(nm) plus software |
Specimen | Max. 200 mm wafers, smaller pieces possible |
Equipment owner | Ing. Charles de Boer
(back-up) +31 6 |