AMS Cryo

Apparatus

AMS 100 I-speeder

Supplier

Adixen

Location

P.00.350

Function

RIE plasma etching of Si, SiN

Gasses

SF6, C4F8, O2, CHF3

Sources

Dressler 3KW RF source, Dressler 300W RF source, Advanced energy 400 W LF source

Cooling system

Liquid Nitrogen cooling combined with heating element (temp range: -1300C, +20)

System layout

ICP chamber with loadlock

Chuck

100mm wafers, clamping with He backside cooling. Adjustable chuck height

Wafer table

Electrode with Helium backside flow and adjustable electrode height. Mechanical clamping by an Alumina ring

Process information

Etching of Si (an)isotropic, photoresist, SiO2, Si3N4, W

Facilities

Laser interferometer system

Specimen

Max. 100mm wafers, small pieces allowed

Equipment owner

Ing. C.R. de Boer
c.r.deboer@tudelft.nl
+31 652169001

 

 (back-up)

 

+31 6