AMS Bosch
Apparatus | AMS 100 I-speeder |
Supplier | Adixen |
Location | P.00.350 |
Function | RIE plasma etching of Si, SiO2, some metals W, Mo. Resist etching |
Gasses | SF6, C4F8, O2, Ar/CHF3, He, CH4 |
Sources | Dressler 3KW RF source, Dressler 300W RF source, Advanced energy 400 W LF source |
Cooling system | Lauda chiller (-400C,+200C) |
System layout | ICP chamber with loadlock |
Chuck | 100mm wafers, clamping with He backside cooling. Adjustable chuck height |
Wafer table | Electrode with Helium backside flow and adjustable electrode height. Mechanical clamping by an Alumina ring |
Process information | Etching of Si (an)isotropic, photoresist, SiO2, Si3N4, W |
Facilities | Laser interferometer system |
Specimen | Max. 100mm wafers, small pieces allowed |
Equipment owner | Ing. C.R. de Boer
(back-up) +31 6 |