Oxford ICP Cl

Apparatus

Plasmalab  system 100

Supplier

Oxford Instruments

Location

P.00.350

Function

RIE plasma etching of Al, Ti, Alox, Si and Diamond

Gasses

HBr, BCl3, Cl2, O2, N2, Ar, He, SF6

Sources

ICP source 2kW, platen 300W RF

Cooling system

-10 C to +65 C with chiller

System layout

ICP chamber with loadlock

Chuck

Mechanical quartz-clamping plate,  electrode with Helium backside flow

Process information

recipes for allowed materials, no Au, no Cu

Facilities

Laser interferometer system

Specimen

Max. 100mm wafers, small pieces allowed

Equipment owner

Ing. Charles de Boer
C.R.deBoer@tudelft.nl
+31 652169001

 

  (back-up)

 

+31 6