Oxford ICP Cl
Apparatus | Plasmalab system 100 |
Supplier | Oxford Instruments |
Location | P.00.350 |
Function | RIE plasma etching of Al, Ti, Alox, Si and Diamond |
Gasses | HBr, BCl3, Cl2, O2, N2, Ar, He, SF6 |
Sources | ICP source 2kW, platen 300W RF |
Cooling system | -10 C to +65 C with chiller |
System layout | ICP chamber with loadlock |
Chuck | Mechanical quartz-clamping plate, electrode with Helium backside flow |
Process information | recipes for allowed materials, no Au, no Cu |
Facilities | Laser interferometer system |
Specimen | Max. 100mm wafers, small pieces allowed |
Equipment owner | Ing. Charles de Boer
(back-up)
+31 6 |