HF vapour etch

Apparatus

    

HFVE

Supplier

 

Idonus

Location

 

P.00.300 (TU03)

Function

 

HF vapour etch

System specification

 

Sacrificial layer etching of SiO2

Chuck

  Substrate heating 35°C to 60°C, electrostratic chuck 

System specification

   

Specimen

  Max 100mm

Equipment owner

 

Eugene Straver

e.j.m.straver@tudelft.nl

+31 618242212

 

 

 

+31 6