HF vapour etch
Apparatus |
| HFVE |
Supplier | Idonus | |
Location | P.00.300 (TU03) | |
Function | HF vapour etch | |
System specification | Sacrificial layer etching of SiO2 | |
Chuck | Substrate heating 35°C to 60°C, electrostratic chuck | |
System specification | ||
Specimen | Max 100mm | |
Equipment owner | Eugene Straver +31 618242212
+31 6
| |