Tepla 300
Apparatus | PVA Tepla 300 |
Supplier | Tepla AG |
Location | P.00.350 |
Function | Wafer stripping (photo resists, e-beam resists) |
Gasses | O2,CF4 |
Sources | Magnetron source |
Cooling system | No substrate cooling |
System layout | Batch chamber |
Chuck | Pyrex holder with faraday grid |
Process information | O2 plasma, O2/CF4 plasma (for Si containing resists) |
Facilities | - |
Specimen | Max. 100mm wafers, small pieces allowed |
Equipment owner | Ing. C.R. de Boer
(back-up)
+31 6 |