Oxford Instruments Estrelas

Apparatus

Plasma Pro 100 Estrelas

Supplier

Oxford Instruments

Location

P.00.350

Function

Dry etching of Silicon: Bosch process and Cryo process

Gasses

SF6, C4F8, O2, CH4, He

Sources

LF 300 W, RF 600 W, ICP RF 8kW

Cooling system

Liquid nitrogen or chiller, -150 C, 70 deg C

System layout

Inductive coupled plasma chamber with loadlock

Chuck

Mechanical AlOx-clamping plate,  electrode with Helium backside flow

Process information

SF6/C4F8 Bosch process ranging from fast etching (>25 um/min) to precise etching (< 25 nm scallops)

SF6/O2 Cryo process for high precision etching

SiO2 mask opening (CHF3)

W etch and NbTiN etch

Facilities

LN2 barrel can be connected by user, system default in chiller mode

Specimen

Max. 100mm wafers, small pieces allowed

Equipment owner

Ing. C.R. de Boer
c.r.deboer@tudelft.nl
+31 652169001

 

  (back-up)

 

+31 6