Raith EBPG-5000+
Main characteristics
Acceleration voltage | 20, 50 or 100 kV |
Beam current | 100 pA … 300 nA |
Spot size | ≈2 … >350 nm (defocussed) |
Main field resolution | 0.16 … 1.0 nm |
Main field size | 160 (167.77216) … 1000 (1048.576) µm (20 bit) |
Subfield resolution | 0.08 … 0.5 nm |
Subfield size | 1.31072 … 4.525 µm (14 bit, 100 kV) |
Beam step size | 0.08 … 4096 nm |
Beam step frequency | 500 Hz … 125 MHz |
Max pattern size | 150 x 150 mm |
Interferometer resolution | 0.618 nm (λ/1024) |
In field distortion | < 20 nm (mean + 3s) |
Stitching | < 40 nm (mean + 3s) |
Alignment | < 30 nm (mean + 3s) |
Operating system | Red Hat Enterprise Linux |
Substrates
Wafers | 2, 3 and 4 inch |
Mask plates | 4 and 5 inch |
Rectangular wafer pieces | 5 x 5 … 19 x 40 mm |
Irregular wafer pieces | Max. of 4 inch wafer |
Pattern converter
Programm | BEAMER |
Supplier | GenISys GmbH |
Input formats | a.o. GDSII, DXF, CIF, TeXtLib |
Option | Proximity Effect Correction |
Apparatus | EBPG5000Plus HS 100 |
Supplier | Raith, www.raith.com |
Purpose | High resolution electron beam exposure |
| Contact | Arnold van Run +31 650965160 a.j.vanrun@tudelft.nl Anja van Langen (back up) +31 650836333 A.K.vanLangen-Suurling@tudelft.nl |
