Dry Etch Recipe for W (evaporated) in Fluorine Based RIE
Recipe
| Gasses: | |
SF6 | 12.5 sccm |
He | 10 sccm |
| Pressure | 1.00 Pa |
| RF Power | 40 W |
| Bias potential | -120 V |
Etch characteristics
| Etch rate: 40 nm/min |
| Anisotropic |
Selectivity
| Etch rate of AZ 1420: 90 nm/min (selectivity: 0.4) |
| Etch rate of EPR resist: 90 nm/min (selectivity: 0.4) |
| Etch rate of Cr: 5 nm/min (selectivity: 8) |
| Etch rate of Al: 5 nm/min (selectivity: 8) |
| Etch rate of C: 15 nm/min (selectivity: 4) |
| Etch rate of SiO2: 20 nm/min (selectivity: 2) |
Remarks
| Etch rate depends on the amount of incorporated oxygen |
| Reproducibility: 15 % |