Dry Etch Recipe for Mo in Fluorine Based RIE
Recipe
| Gases: | |
SF6 | 12.5 sccm |
| He | 10 sccm |
| Pressure | 1.00 Pa |
| RF Power | 40 W |
| Bias potential | -200 V |
Etch characteristics
| Etch rate: to be determined |
| Anisotropy: to be determined |
Selectivity
| Etch rate of AZ 1420: 90 nm/min |
| Etch rate of EPR resist: 90 nm/min |
Remarks
| Etch rate does not depend on bake temperature of the resist |
| Large aspect ratio dependence; over etch may be required |
| Reproducibility: 5 % |
| This process is also used for descumming (15-20 s) and sharpening resist profiles |