Recipe
| Gasses: | |
O2 | 20 sccm |
| Pressure | 0.4 Pa (as low as possible) |
| RF Power | 40-50 W |
| Bias potential | -180 V |
Etch characteristics
| Etch rate: 92 nm/min |
| Anisotropy: 100 % |
Selectivity
| Selective over all non-organic materials |
Remarks
| Reproducibility: 5 % |
| This process is also used for descumming (15-20 s) and sharpening resist profiles |