Recipe
| Gasses: | |
CHF3 | 50 sccm |
O2 | 2.5 sccm |
| Pressure | 0.8 Pa (as low as possible) |
| RF Power | 50 W |
| Bias potential | - |
Etch characteristics
| Etch is anisotropic |
| Etch rate: 10 nm/min |
Selectivity
| AZ etch rate: 10 nm/min (selectivity 1) |
Remarks
| Strong aspect ratio dependence |
| Strong aspect ratio dependence |
| Wafer uniformity: 15% |
| Reproducibility: 15% |
| Etch rate almost proportional to the rf power |
| PMMA inhibits etching at high pressure |
| Hard baked AZ 1420 recommended mask |