Recipe
| Gasses: | |
BCl3 | 10 sccm |
Cl2 | 10 sccm |
N2 | 10 sccm |
| Pressure | 1.00 Pa |
| RF Power | 50 W |
| Substrate temperature | ambient |
Etch characteristics
| Etch rate: 30 nm/min |
Results
| Gasses: | |
BCl3 | 10 sccm |
Cl2 | 10 sccm |
N2 | 10 sccm |
| Pressure | 1.00 Pa |
| RF Power | 50 W |
| Substrate temperature | ambient |
| Etch rate: 30 nm/min |