Recipe for Dry Etching Silicon Nitride in Fluorine based RIE Recipe Gasses:CHF325 sccmAr25 sccmPressure0,8 PaRF Power50 WBias potential:-400 V Etch characteristics Anisotropy: 80%Etch rate: 15-20 nm/min Deel deze pagina: Facebook Linkedin Twitter Email WhatsApp Deel deze pagina