Dry Etching of Silicon Germanium in Fluorine RIE
Recipe
| Gasses: | |
SF6 | 12.5 sccm |
O2 | 2.5 sccm |
He | 10 sccm |
| Pressure | 1.0 Pa |
| RF Power | 40 W |
| Bias potential | -115 W |
Etch characteristics
| Etch rate: 200 nm/min |
| Anisotropy: 80% |
Selectivity
| Etch rate of AZ 1420: 60 nm/min (selectivity: 3.3) |
Remarks
| Etch rate depends on substrate temperature |
| Etch rate depends strongly on Si/Ge ratio |
| Etch rate depends strongly on O2 content |
| Anisotropy depend strongly on O2 content |
| Poor reproducibility; requires proper conditioning of the reactor |