Dry Etch Recipe for SiGe alloy in Chlorine based RIE
Recipe
| Gases: | |
BCl3 | 15.0 sccm |
Cl2 | 15.0 sccm |
He | 17.5 sccm |
| Pressure | 2.0 Pa |
| RF Power | 65 W |
| Bias potential | 10 V |
Etch characteristics
| Etch rate: 60 nm/min (for Si0.75Ge0.25) |
| Etching is anisotropic |
Selectivity
| Selective over all non-organic materials |
Remarks
| Considerable loading effect |
| Reproducibility: 10 % |
| Etch rate almost proportional to RF power |
| Etch rate depends on Si/Ge ratio |
| The wafer heats up considerably during etching (mask choice!) |
| Recommended mask is hard baked AZ 1420 |