NEB22 Recipe
Substrate preparation: Spincoat wafer with HMDS and bake at 200°C for 2 minutes
tone | negative |
special | chemical amplified resist; very sensitive with reasonable resolution |
reference | http://www.sciencedirect.com/science/article/pii/S0167931700003567 Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography A.J. van Didewaard, W.S.M.M. Ketelaars, R.F.M. Roes, J.A.J. Kwinten, F.C.M.J.M. van Delft, A.J. van Run, A.K. van Langen-Suurling, and J. Romijn, Microelectronic Engineering, 53, (2000), 461-464 |
spincoat | 2000rpm 277nm 4000rpm 200nm 6000rpm 150nm |
prebake | on thick plate in oven: 2 minutes @ 110°C |
exposure time | about 18μC/cm² @100kV for 1μm lines and spaces |
postbake | on thick plate in oven: 2 minutes @ 105°C |
development | 30s in MF322 15s in MF322 : demi-water = 1:9 15s in MF322 : demi-water = 1:9 (fresh bath) 15s in demi-water 15s in demi-water (fresh bath) During development wafer should be held vertical and please move it!!! |
removal | NEB22 can be removed from your sample with PRS3000 or NMP |
remakrs | Long lines with widths smaller than about 53nm tend to fall over under their own weight, possibly due to internal stresses. |